2SB502A Bipolar Transistor

Characteristics of 2SB502A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -10 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 30 to 280
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-66

Pinout of 2SB502A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB502A transistor can have a current gain of 30 to 280. The gain of the 2SB502A-O will be in the range from 50 to 140, for the 2SB502A-R it will be in the range from 30 to 70, for the 2SB502A-Y it will be in the range from 100 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB502A might only be marked "B502A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB502A is the 2SD877.
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