2SD2389-O Bipolar Transistor

Characteristics of 2SD2389-O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 5000 to 12000
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD2389-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD2389-O transistor can have a current gain of 5000 to 12000. The gain of the 2SD2389 will be in the range from 5000 to 30000, for the 2SD2389-P it will be in the range from 6500 to 20000, for the 2SD2389-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SD2389-O equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD2389-O might only be marked "D2389-O".

Complementary PNP transistor

The complementary PNP transistor to the 2SD2389-O is the 2SB1559-O.

Replacement and Equivalent for 2SD2389-O transistor

You can replace the 2SD2389-O with the 2SC2579, 2SD2390, 2SD2390-O, BDV67D, MJH11018, MJH11018G, MJH11020, MJH11020G, MJH11022 or MJH11022G.
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