MJH11022G Bipolar Transistor
Characteristics of MJH11022G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 250 V
- Collector-Base Voltage, max: 250 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 15 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 400 to 15000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-247
- The MJH11022G is the lead-free version of the MJH11022 transistor
Pinout of MJH11022G
Replacement and Equivalent for MJH11022G transistor
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