2SD1380-Q Bipolar Transistor

Characteristics of 2SD1380-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 32 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 120 to 270
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD1380-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1380-Q transistor can have a current gain of 120 to 270. The gain of the 2SD1380 will be in the range from 82 to 390, for the 2SD1380-P it will be in the range from 82 to 180, for the 2SD1380-R it will be in the range from 180 to 390.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1380-Q might only be marked "D1380-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1380-Q is the 2SB1009-Q.

Replacement and Equivalent for 2SD1380-Q transistor

You can replace the 2SD1380-Q with the 2SC1162, 2SD1348, 2SD1682, 2SD1683, 2SD1722, 2SD1723, 2SD794, 2SD794A, BD131, BD187, BD189, BD233, BD233G, BD235, BD235G, BD375, BD377, BDX35, BDX36, KSD794, KSD794A, MJE222, MJE225, MJE521 or MJE521G.
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