2SB731-E Bipolar Transistor

Characteristics of 2SB731-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 360 to 600
  • Transition Frequency, min: 75 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB731-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB731-E transistor can have a current gain of 360 to 600. The gain of the 2SB731 will be in the range from 135 to 600, for the 2SB731-F it will be in the range from 300 to 480, for the 2SB731-K it will be in the range from 200 to 400, for the 2SB731-L it will be in the range from 135 to 270.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB731-E might only be marked "B731-E".

SMD Version of 2SB731-E transistor

The 2SB1115 (SOT-89), 2SB1115-YK (SOT-89), 2SB1122 (SOT-89), 2SB1122-U (SOT-89), 2STR2160 (SOT-23), FMMTA55 (SOT-23), KST55 (SOT-23), MMBTA55 (SOT-23), PZTA55 (SOT-223) and SMBTA55 (SOT-23) is the SMD version of the 2SB731-E transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB731-E transistor

You can replace the 2SB731-E with the BD168, BD170, BD190, BD236, BD236G, BD238, BD238G, MJE235, MJE252, MJE254, MJE711 or MJE712.
If you find an error please send an email to mail@el-component.com