2SB731 Bipolar Transistor

Characteristics of 2SB731 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 135 to 600
  • Transition Frequency, min: 75 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB731

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB731 transistor can have a current gain of 135 to 600. The gain of the 2SB731-E will be in the range from 360 to 600, for the 2SB731-F it will be in the range from 300 to 480, for the 2SB731-K it will be in the range from 200 to 400, for the 2SB731-L it will be in the range from 135 to 270.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB731 might only be marked "B731".

SMD Version of 2SB731 transistor

The 2SB1115 (SOT-89), 2SB1122 (SOT-89), FMMTA55 (SOT-23), KST55 (SOT-23), MMBTA55 (SOT-23), PZTA55 (SOT-223) and SMBTA55 (SOT-23) is the SMD version of the 2SB731 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB731 transistor

You can replace the 2SB731 with the BD168, BD170, BD190, BD236, BD236G, BD238, BD238G, MJE235, MJE252, MJE254, MJE711 or MJE712.
If you find an error please send an email to mail@el-component.com