2SB649-D Bipolar Transistor

Characteristics of 2SB649-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB649-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB649-D transistor can have a current gain of 160 to 320. The gain of the 2SB649 will be in the range from 60 to 320, for the 2SB649-B it will be in the range from 60 to 120, for the 2SB649-C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB649-D might only be marked "B649-D".

Complementary NPN transistor

The complementary NPN transistor to the 2SB649-D is the 2SD669-D.

SMD Version of 2SB649-D transistor

The PBHV9115T (SOT-23), PBHV9115X (SOT-89) and PBHV9115Z (SOT-223) is the SMD version of the 2SB649-D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB649-D transistor

You can replace the 2SB649-D with the 2SA1021, 2SA1021-Y, 2SA1249 or 2SA1507.
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