2SD669-D Bipolar Transistor

Characteristics of 2SD669-D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD669-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD669-D transistor can have a current gain of 160 to 320. The gain of the 2SD669 will be in the range from 60 to 320, for the 2SD669-B it will be in the range from 60 to 120, for the 2SD669-C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD669-D might only be marked "D669-D".

Complementary PNP transistor

The complementary PNP transistor to the 2SD669-D is the 2SB649-D.

Replacement and Equivalent for 2SD669-D transistor

You can replace the 2SD669-D with the 2SC2481, 2SC2481-Y, 2SC3117 or 2SC3902.
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