2SB646A-B Bipolar Transistor

Characteristics of 2SB646A-B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB646A-B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB646A-B transistor can have a current gain of 60 to 120. The gain of the 2SB646A will be in the range from 60 to 200, for the 2SB646A-C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB646A-B might only be marked "B646A-B".

Complementary NPN transistor

The complementary NPN transistor to the 2SB646A-B is the 2SD666A-B.

Replacement and Equivalent for 2SB646A-B transistor

You can replace the 2SB646A-B with the 2N5401C, 2SA1013, 2SA1013R, 2SA1018, 2SA1018Q, 2SA1275, 2SA1275-R, 2SA1284, 2SA1370, 2SA1370-D, 2SA879, 2SA879-Q, 2SB1221, 2SB1221-Q, 2SB647A, 2SB647AB, HSB1109S, HSB1109S-B, KSA1013, KSA1013R, KTA1275 or KTA1275R.
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