2SD666A-B Bipolar Transistor

Characteristics of 2SD666A-B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.05 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SD666A-B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD666A-B transistor can have a current gain of 60 to 120. The gain of the 2SD666A will be in the range from 60 to 200, for the 2SD666A-C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD666A-B might only be marked "D666A-B".

Complementary PNP transistor

The complementary PNP transistor to the 2SD666A-B is the 2SB646A-B.

Replacement and Equivalent for 2SD666A-B transistor

You can replace the 2SD666A-B with the 2SC1473, 2SC1473Q, 2SC1573, 2SC1573-Q, 2SC2383, 2SC2383R, 2SC3228, 2SC3228-R, 2SC3244, 2SC3467, 2SC3467-D, 2SD667A, 2SD667AB, 2SD668A, 2SD668A-B, HSD1609S, HSD1609S-B, KSC1009C, KSC2310, KSC2383, KSC2383R, KTC3228 or KTC3228R.
If you find an error please send an email to mail@el-component.com