2SA1370-D Bipolar Transistor

Characteristics of 2SA1370-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA1370-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1370-D transistor can have a current gain of 60 to 120. The gain of the 2SA1370 will be in the range from 40 to 320, for the 2SA1370-C it will be in the range from 40 to 80, for the 2SA1370-E it will be in the range from 100 to 200, for the 2SA1370-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1370-D might only be marked "A1370-D".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1370-D is the 2SC3467-D.

SMD Version of 2SA1370-D transistor

The BF623 (SOT-89) and BF823 (SOT-23) is the SMD version of the 2SA1370-D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1370-D transistor

You can replace the 2SA1370-D with the 2SA1091, 2SA1091-O, 2SA1371, 2SA1371-D, 2SA1624, 2SA1624-D, 2SA1625, 2SA1625-L, KSA1625, KSA1625-L, KTA1277, KTA1277O or KTA1279.
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