2SB646A Bipolar Transistor

Characteristics of 2SB646A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB646A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB646A transistor can have a current gain of 60 to 200. The gain of the 2SB646A-B will be in the range from 60 to 120, for the 2SB646A-C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB646A might only be marked "B646A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB646A is the 2SD666A.

Replacement and Equivalent for 2SB646A transistor

You can replace the 2SB646A with the 2N5401C, 2SA1013, 2SA1018, 2SA1275, 2SA1284, 2SA1370, 2SA879, 2SB1221, 2SB647A, HSB1109S, KSA1013 or KTA1275.
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