2SB598-G Bipolar Transistor

Characteristics of 2SB598-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -25 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.6 W
  • DC Current Gain (hfe): 280 to 560
  • Transition Frequency, min: 180 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SB598-G

The 2SB598-G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB598-G transistor can have a current gain of 280 to 560. The gain of the 2SB598 will be in the range from 60 to 560, for the 2SB598-D it will be in the range from 60 to 120, for the 2SB598-E it will be in the range from 100 to 200, for the 2SB598-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB598-G might only be marked "B598-G".

Complementary NPN transistor

The complementary NPN transistor to the 2SB598-G is the 2SD545-G.

SMD Version of 2SB598-G transistor

The BC808 (SOT-23), BC808-40 (SOT-23), BC808-40W (SOT-323) and BC808W (SOT-323) is the SMD version of the 2SB598-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB598-G transistor

You can replace the 2SB598-G with the 2N4953, 2N4954, 2SB1116, 2SB1229, 2SB1229-U, 2SB892, 2SB892-U, 2SB985, 2SB985U, KSB1116 or KSB1116S.
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