2SB1429-R Bipolar Transistor

Characteristics of 2SB1429-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 55 to 110
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1429-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1429-R transistor can have a current gain of 55 to 110. The gain of the 2SB1429 will be in the range from 55 to 160, for the 2SB1429-O it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1429-R might only be marked "B1429-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1429-R is the 2SD2155-R.

Replacement and Equivalent for 2SB1429-R transistor

You can replace the 2SB1429-R with the 2SA1294, 2SA1302, 2SA1302R, 2SA1386A, 2SA1386A-O, 2SA1386A-P, 2SA1386A-Y, 2SA1492, 2SA1943, 2SA1943R, 2SA1962, 2SA1962R, 2SA1986, 2SA2121, 2SA2121-R, 2SA2151, 2SA2151A, 2SA2151A-O, 2SA2151A-P, 2SA2151A-Y, 2SA2223, 2SA2223A, FJA4213, FJA4213R, FJL4215, FJL4215R, KTA1943, KTA1943A, KTA1943AR, KTA1943R, KTA1962, KTA1962A, KTA1962AR, KTA1962R, MAG9413, MJW1302A, MJW1302AG or NTE2329.
If you find an error please send an email to mail@el-component.com