KTA1962AR Bipolar Transistor
Characteristics of KTA1962AR Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -230 V
- Collector-Base Voltage, max: -230 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 130 W
- DC Current Gain (hfe): 55 to 110
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -50 to +150 °C
- Package: TO-3P
- Electrically Similar to the Popular 2SA1962R transistor
Pinout of KTA1962AR
Classification of hFE
Complementary NPN transistor
Replacement and Equivalent for KTA1962AR transistor
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