2SA1962R Bipolar Transistor

Characteristics of 2SA1962R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -250 V
  • Collector-Base Voltage, max: -250 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -17 A
  • Collector Dissipation: 130 W
  • DC Current Gain (hfe): 55 to 110
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -50 to +150 °C
  • Package: TO-3P

Pinout of 2SA1962R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1962R transistor can have a current gain of 55 to 110. The gain of the 2SA1962 will be in the range from 55 to 160, for the 2SA1962O it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1962R might only be marked "A1962R".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1962R is the 2SC5242R.

Replacement and Equivalent for 2SA1962R transistor

You can replace the 2SA1962R with the FJA4213, FJA4213R, FJL4215, FJL4215R or MAG9413.
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