2SB1270-R Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -80 V
• Collector-Base Voltage, max: -90 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -5 A
• Collector Dissipation: 30 W
• DC Current Gain (h_fe): 100 to 200
• Transition Frequency, min: 20 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-262

Here is an image showing the pin diagram of this transistor.The 2SB1270-R transistor can have a current gain of 100 to 200. The gain of the 2SB1270 will be in the range from 70 to 280, for the 2SB1270-Q it will be in the range from 70 to 140, for the 2SB1270-S it will be in the range from 140 to 280.Sometimes the "2S" prefix is not marked on the package - the 2SB1270-R might only be marked "B1270-R".The complementary NPN transistor to the 2SB1270-R is the 2SD1906-R.The BDP952 (SOT-223) is the SMD version of the 2SB1270-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the 2SB1270-R with the 2SB1271 or 2SB1271-R.