2SD1906-R Bipolar Transistor

Characteristics of 2SD1906-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-262

Pinout of 2SD1906-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1906-R transistor can have a current gain of 100 to 200. The gain of the 2SD1906 will be in the range from 70 to 280, for the 2SD1906-Q it will be in the range from 70 to 140, for the 2SD1906-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1906-R might only be marked "D1906-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1906-R is the 2SB1270-R.

SMD Version of 2SD1906-R transistor

The BDP951 (SOT-223) is the SMD version of the 2SD1906-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1906-R transistor

You can replace the 2SD1906-R with the 2SD1907 or 2SD1907-R.
If you find an error please send an email to mail@el-component.com