2SB1270 Bipolar Transistor

Characteristics of 2SB1270 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -90 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 70 to 280
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-262

Pinout of 2SB1270

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1270 transistor can have a current gain of 70 to 280. The gain of the 2SB1270-Q will be in the range from 70 to 140, for the 2SB1270-R it will be in the range from 100 to 200, for the 2SB1270-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1270 might only be marked "B1270".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1270 is the 2SD1906.

SMD Version of 2SB1270 transistor

The BDP952 (SOT-223) is the SMD version of the 2SB1270 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1270 transistor

You can replace the 2SB1270 with the 2SB1271.
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