2SB1271 Bipolar Transistor
Characteristics of 2SB1271 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -90 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -7 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 70 to 280
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-262
Pinout of 2SB1271
Classification of hFE
Marking
Complementary NPN transistor
If you find an error please send an email to mail@el-component.com