2SB1270-Q Bipolar Transistor

Characteristics of 2SB1270-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -90 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-262

Pinout of 2SB1270-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1270-Q transistor can have a current gain of 70 to 140. The gain of the 2SB1270 will be in the range from 70 to 280, for the 2SB1270-R it will be in the range from 100 to 200, for the 2SB1270-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1270-Q might only be marked "B1270-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1270-Q is the 2SD1906-Q.

SMD Version of 2SB1270-Q transistor

The BDP952 (SOT-223) is the SMD version of the 2SB1270-Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1270-Q transistor

You can replace the 2SB1270-Q with the 2SB1271 or 2SB1271-Q.
If you find an error please send an email to mail@el-component.com