2SD1906 Bipolar Transistor

Characteristics of 2SD1906 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 70 to 280
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-262

Pinout of 2SD1906

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1906 transistor can have a current gain of 70 to 280. The gain of the 2SD1906-Q will be in the range from 70 to 140, for the 2SD1906-R it will be in the range from 100 to 200, for the 2SD1906-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1906 might only be marked "D1906".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1906 is the 2SB1270.

SMD Version of 2SD1906 transistor

The BDP951 (SOT-223) is the SMD version of the 2SD1906 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1906 transistor

You can replace the 2SD1906 with the 2SD1907.
If you find an error please send an email to mail@el-component.com