2SD1718-Q Bipolar Transistor

Characteristics of 2SD1718-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 180 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1718-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1718-Q transistor can have a current gain of 60 to 120. The gain of the 2SD1718 will be in the range from 60 to 200, for the 2SD1718-P it will be in the range from 100 to 200, for the 2SD1718-S it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1718-Q might only be marked "D1718-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1718-Q is the 2SB1163-Q.

Replacement and Equivalent for 2SD1718-Q transistor

You can replace the 2SD1718-Q with the 2SC3263, 2SC3281, 2SC3519A, 2SC3519A-O, 2SC3519A-P, 2SC3519A-Y, 2SC5200, 2SC5200N, 2SC5242, 2SC5358, 2SC5949, 2SC6011, 2SC6011A, 2SC6011A-O, 2SC6011A-P, 2SC6011A-Y, 2SC6145, 2SC6145A, 2SD1313, 2SD2155, FJA4313, FJL4315, KTC5200, KTC5200A, KTC5242, KTC5242A, MAG6333, MJW3281A, MJW3281AG or NTE2328.
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