2SB1157-P Bipolar Transistor

Characteristics of 2SB1157-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1157-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1157-P transistor can have a current gain of 100 to 200. The gain of the 2SB1157 will be in the range from 60 to 200, for the 2SB1157-Q it will be in the range from 60 to 120, for the 2SB1157-S it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1157-P might only be marked "B1157-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1157-P is the 2SD1712-P.

SMD Version of 2SB1157-P transistor

The BDP954 (SOT-223) is the SMD version of the 2SB1157-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1157-P transistor

You can replace the 2SB1157-P with the 2SA1141, 2SA1141-Q, 2SB1054, 2SB1054-P, 2SB1055, 2SB1055-P, 2SB1056, 2SB1056-P, 2SB1057, 2SB1057-P, 2SB1158, 2SB1158-P, 2SB1159, 2SB1159-P, 2SB1160, 2SB1160-P, 2SB1161 or 2SB1161-P.
If you find an error please send an email to mail@el-component.com