2SB1056 Bipolar Transistor

Characteristics of 2SB1056 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 40 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1056

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1056 transistor can have a current gain of 40 to 200. The gain of the 2SB1056-P will be in the range from 100 to 200, for the 2SB1056-Q it will be in the range from 60 to 120, for the 2SB1056-R it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1056 might only be marked "B1056".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1056 is the 2SD1487.

Replacement and Equivalent for 2SB1056 transistor

You can replace the 2SB1056 with the 2SB1057.
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