2SB1158-P Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -120 V
• Collector-Base Voltage, max: -120 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -6 A
• Collector Dissipation: 70 W
• DC Current Gain (h_fe): 100 to 200
• Transition Frequency, min: 20 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-3PF

Here is an image showing the pin diagram of this transistor.The 2SB1158-P transistor can have a current gain of 100 to 200. The gain of the 2SB1158 will be in the range from 60 to 200, for the 2SB1158-Q it will be in the range from 60 to 120, for the 2SB1158-S it will be in the range from 80 to 160.Sometimes the "2S" prefix is not marked on the package - the 2SB1158-P might only be marked "B1158-P".The complementary NPN transistor to the 2SB1158-P is the 2SD1713-P.The BDP956 (SOT-223) is the SMD version of the 2SB1158-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the 2SB1158-P with the 2SB1055, 2SB1055-P, 2SB1056, 2SB1056-P, 2SB1057, 2SB1057-P, 2SB1159, 2SB1159-P, 2SB1160, 2SB1160-P, 2SB1161 or 2SB1161-P.