2SB1160-P Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -150 V
• Collector-Base Voltage, max: -150 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -9 A
• Collector Dissipation: 100 W
• DC Current Gain (h_fe): 100 to 200
• Transition Frequency, min: 20 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-3PF

Here is an image showing the pin diagram of this transistor.The 2SB1160-P transistor can have a current gain of 100 to 200. The gain of the 2SB1160 will be in the range from 60 to 200, for the 2SB1160-Q it will be in the range from 60 to 120, for the 2SB1160-S it will be in the range from 80 to 160.Sometimes the "2S" prefix is not marked on the package - the 2SB1160-P might only be marked "B1160-P".The complementary NPN transistor to the 2SB1160-P is the 2SD1715-P.You can replace the 2SB1160-P with the 2SB1057, 2SB1057-P, 2SB1161 or 2SB1161-P.