2SA1141-Q Bipolar Transistor

Characteristics of 2SA1141-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -115 V
  • Collector-Base Voltage, max: -115 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SA1141-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1141-Q transistor can have a current gain of 100 to 200. The gain of the 2SA1141 will be in the range from 60 to 200, for the 2SA1141-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1141-Q might only be marked "A1141-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1141-Q is the 2SC2681-Q.

Replacement and Equivalent for 2SA1141-Q transistor

You can replace the 2SA1141-Q with the 2SB1161 or 2SB1161-P.
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