2SB1149-L Bipolar Transistor
Characteristics of 2SB1149-L Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -8 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 15 W
- DC Current Gain (hfe): 3000 to 7000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
Pinout of 2SB1149-L
Classification of hFE
Marking
Replacement and Equivalent for 2SB1149-L transistor
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