2SA885S Bipolar Transistor

Characteristics of 2SA885S Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -35 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 5 W
  • DC Current Gain (hfe): 170 to 340
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SA885S

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA885S transistor can have a current gain of 170 to 340. The gain of the 2SA885 will be in the range from 85 to 340, for the 2SA885Q it will be in the range from 85 to 170, for the 2SA885R it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA885S might only be marked "A885S".

Complementary NPN transistor

The complementary NPN transistor to the 2SA885S is the 2SC1846S.

Replacement and Equivalent for 2SA885S transistor

You can replace the 2SA885S with the 2SA985S, 2SB1142, 2SB1143, 2SB1165, 2SB1166, 2SB731, 2SB986, BD132, BD166, BD168, BD188, BD190, BD234, BD234G, BD236, BD236G, BD376, BD376-25, BD378, BD378-25, MJE232, MJE235, MJE371, MJE371G, MJE710 or MJE711.
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