2SA885 Bipolar Transistor

Characteristics of 2SA885 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -35 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 5 W
  • DC Current Gain (hfe): 85 to 340
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SA885

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA885 transistor can have a current gain of 85 to 340. The gain of the 2SA885Q will be in the range from 85 to 170, for the 2SA885R it will be in the range from 120 to 240, for the 2SA885S it will be in the range from 170 to 340.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA885 might only be marked "A885".

Complementary NPN transistor

The complementary NPN transistor to the 2SA885 is the 2SC1846.

Replacement and Equivalent for 2SA885 transistor

You can replace the 2SA885 with the 2SB1165, 2SB1166, BD132, BD166, BD168, BD188, BD190, BD234, BD234G, BD236, BD236G, BD376, BD378, MJE232, MJE235, MJE371, MJE371G, MJE710 or MJE711.
If you find an error please send an email to mail@el-component.com