2SA709O Bipolar Transistor

Characteristics of 2SA709O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 0.8 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA709O

The 2SA709O is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA709O transistor can have a current gain of 70 to 140. The gain of the 2SA709 will be in the range from 40 to 400, for the 2SA709G it will be in the range from 200 to 400, for the 2SA709R it will be in the range from 40 to 80, for the 2SA709Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA709O might only be marked "A709O".

Complementary NPN transistor

The complementary NPN transistor to the 2SA709O is the 2SC1009O.

SMD Version of 2SA709O transistor

The 2N5401S (SOT-23), DXT5401 (SOT-89), DZT5401 (SOT-223), KST5401 (SOT-23) and MMBT5401 (SOT-23) is the SMD version of the 2SA709O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

2SA709O Transistor in TO-92 Package

The KSA709O is the TO-92 version of the 2SA709O.

Replacement and Equivalent for 2SA709O transistor

You can replace the 2SA709O with the KSA709 or KSA709O.
If you find an error please send an email to mail@el-component.com