DZT5401 Bipolar Transistor
Characteristics of DZT5401 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -0.6 A
- Collector Dissipation: 1 W
- DC Current Gain (hfe): 60 to 240
- Transition Frequency, min: 300 MHz
- Noise Figure, max: 8 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-223
- Electrically Similar to the Popular 2N5401 transistor
Pinout of DZT5401
Marking
Complementary NPN transistor
DZT5401 Transistor in TO-92 Package
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