2N5401S Bipolar Transistor
Characteristics of 2N5401S Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.6 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 60 to 240
- Transition Frequency, min: 100 MHz
- Noise Figure, max: 8 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of 2N5401S
Marking
Complementary NPN transistor
Replacement and Equivalent for 2N5401S transistor
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