2N5401S Bipolar Transistor

Characteristics of 2N5401S Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.6 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 60 to 240
  • Transition Frequency, min: 100 MHz
  • Noise Figure, max: 8 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2N5401S

Here is an image showing the pin diagram of this transistor.

Marking

The 2N5401S transistor is marked as "ZE".

Complementary NPN transistor

The complementary NPN transistor to the 2N5401S is the 2N5551S.

Replacement and Equivalent for 2N5401S transistor

You can replace the 2N5401S with the MMBT5401.
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