Characteristics of 2SA709G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -8 V
- Collector Current − Continuous, max: -0.7 A
- Collector Dissipation: 0.8 W
- DC Current Gain (hfe): 200 to 400
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2SA709G
The 2SA709G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.
Classification of hFE
The 2SA709G transistor can have a current gain of
200 to
400. The gain of the
2SA709 will be in the range from
40 to
400, for the
2SA709O it will be in the range from
70 to
140, for the
2SA709R it will be in the range from
40 to
80, for the
2SA709Y it will be in the range from
120 to
240.
Marking
Sometimes the "2S" prefix is not marked on the package - the 2SA709G might only be marked "
A709G".
Complementary NPN transistor
The complementary
NPN transistor to the 2SA709G is the
2SC1009G.
2SA709G Transistor in TO-92 Package
The
KSA709G is the TO-92 version of the 2SA709G.
Replacement and Equivalent for 2SA709G transistor
You can replace the 2SA709G with the
KSA709 or
KSA709G.
If you find an error please send an email to mail@el-component.com