2SA709R Bipolar Transistor

Characteristics of 2SA709R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 0.8 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA709R

The 2SA709R is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA709R transistor can have a current gain of 40 to 80. The gain of the 2SA709 will be in the range from 40 to 400, for the 2SA709G it will be in the range from 200 to 400, for the 2SA709O it will be in the range from 70 to 140, for the 2SA709Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA709R might only be marked "A709R".

Complementary NPN transistor

The complementary NPN transistor to the 2SA709R is the 2SC1009R.
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