2N6671 Bipolar Transistor
Characteristics of 2N6671 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 300 V
- Collector-Base Voltage, max: 450 V
- Emitter-Base Voltage, max: 8 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 10 to 40
- Transition Frequency, min: 60 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of 2N6671
Replacement and Equivalent for 2N6671 transistor
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