2N6671 Bipolar Transistor

Characteristics of 2N6671 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 450 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 10 to 40
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6671

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6671 transistor

You can replace the 2N6671 with the 2N6251, 2N6672, 2N6673, 2N6676, 2N6677, 2N6678, 2SC2429, 2SC2429A, 2SC3045, 2SC3058, 2SC3058A, BUX48, BUX48A, MJ12021, MJ12022, MJ16006 or MJ16008.
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