2N6673 Bipolar Transistor

Characteristics of 2N6673 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 650 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 10 to 40
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6673

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6673 transistor

You can replace the 2N6673 with the 2N6678, 2SC2429, 2SC2429A, 2SC3045, 2SC3058, 2SC3058A, BUX48, BUX48A, MJ12021, MJ12022, MJ16006, MJ16008, MJ8504 or MJ8505.
If you find an error please send an email to mail@el-component.com