NTE219 Bipolar Transistor

Characteristics of NTE219 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 115 W
  • DC Current Gain (hfe): 20 to 70
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of NTE219

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the NTE219 is the NTE130.

Replacement and Equivalent for NTE219 transistor

You can replace the NTE219 with the 2N5879, 2N5880, 2N5883, 2N5883G, 2N5884, 2N5884G, 2N6030, 2N6246, 2N6247, 2N6248, 2N6436, 2N6437, 2N6438, MJ14001, MJ14001G, MJ14003, MJ14003G, MJ15016, MJ15016G, MJ2955, MJ2955A or MJ2955G.
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