NTE219 Bipolar Transistor
Characteristics of NTE219 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 115 W
- DC Current Gain (hfe): 20 to 70
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of NTE219
Complementary NPN transistor
Replacement and Equivalent for NTE219 transistor
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