MJ15016G Bipolar Transistor
Characteristics of MJ15016G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -120 V
- Collector-Base Voltage, max: -200 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 180 W
- DC Current Gain (hfe): 20 to 70
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
- The MJ15016G is the lead-free version of the MJ15016 transistor
Pinout of MJ15016G
Complementary NPN transistor
Replacement and Equivalent for MJ15016G transistor
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