MJ15016G Bipolar Transistor

Characteristics of MJ15016G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 180 W
  • DC Current Gain (hfe): 20 to 70
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ15016G is the lead-free version of the MJ15016 transistor

Pinout of MJ15016G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ15016G is the MJ15015G.

Replacement and Equivalent for MJ15016G transistor

You can replace the MJ15016G with the 2N6030, 2N6438 or MJ15016.
If you find an error please send an email to mail@el-component.com