2N5880 Bipolar Transistor

Characteristics of 2N5880 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 160 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5880

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5880 is the 2N5882.

Replacement and Equivalent for 2N5880 transistor

You can replace the 2N5880 with the 2N5884, 2N5884G, 2N6247, 2N6248, MJ14003 or MJ14003G.
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