MJ14001 Bipolar Transistor

Characteristics of MJ14001 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -60 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 15 to 100
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ14001

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ14001 is the MJ14000.

Replacement and Equivalent for MJ14001 transistor

You can replace the MJ14001 with the MJ14001G, MJ14003 or MJ14003G.

Lead-free Version

The MJ14001G transistor is the lead-free version of the MJ14001.
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