NTE197 Bipolar Transistor

Characteristics of NTE197 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -70 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 30 to 150
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of NTE197

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the NTE197 is the NTE196.

Replacement and Equivalent for NTE197 transistor

You can replace the NTE197 with the 2N6107, 2N6107G, 2N6110, 2N6491, 2N6491G, BD710, BD712, BD744B, BD744C, BD800, BD802, BD810, BD910, BD912, BDT94, BDT94F, BDT96, BDT96F or BDX78.
If you find an error please send an email to mail@el-component.com