BC847W Bipolar Transistor
Characteristics of BC847W Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 45 V
- Collector-Base Voltage, max: 50 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.1 A
- Collector Dissipation: 0.2 W
- DC Current Gain (hfe): 110 to 800
- Transition Frequency, min: 150 MHz
- Noise Figure, max: 2 dB
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-323
Pinout of BC847W
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for BC847W transistor
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