BC847CW Bipolar Transistor

Characteristics of BC847CW Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 50 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC847CW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC847CW transistor can have a current gain of 420 to 800. The gain of the BC847AW will be in the range from 110 to 220, for the BC847BW it will be in the range from 200 to 450, for the BC847W it will be in the range from 110 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC847CW is the BC857CW.

Replacement and Equivalent for BC847CW transistor

You can replace the BC847CW with the BC846CW, BC846W, BC850CW or BC850W.
If you find an error please send an email to mail@el-component.com