IRFR3504Z MOSFET
Specifications of IRFR3504Z MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 40 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 9 mΩ
- Continuous Drain Current: 77 A
- Total Gate Charge: 30 nC
- Power Dissipation: 90 W
- Package: D-PAK