IRFR4104 MOSFET
Specifications of IRFR4104 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 40 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 5.5 mΩ
- Continuous Drain Current: 119 A
- Total Gate Charge: 59 nC
- Power Dissipation: 140 W
- Package: D-PAK
Pinout of IRFR4104
