IRFR1010Z MOSFET
Specifications of IRFR1010Z MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 7.5 mΩ
- Continuous Drain Current: 91 A
- Total Gate Charge: 63 nC
- Power Dissipation: 140 W
- Package: D-PAK
Pinout of IRFR1010Z
