IRFR1018E MOSFET
Specifications of IRFR1018E MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 8.4 mΩ
- Continuous Drain Current: 79 A
- Total Gate Charge: 46 nC
- Power Dissipation: 110 W
- Package: D-PAK
Pinout of IRFR1018E
