IRFI520N MOSFET
Specifications of IRFI520N MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 200 mΩ
- Continuous Drain Current: 7.2 A
- Total Gate Charge: 16.7 nC
- Power Dissipation: 27 W
- Package: TO-220 FULLPAK (ISO)